Aux Flyback Converter One Switch Opologies Topologies Osg90r1K2FF To220f Aux Flyback High Voltage Power Mosfet

Model NO.
OSG90R1K2FF TO220F
Industries
LED Lighting
Type
Fast EV Charging Station
Certification
ISO, TUV, RoHS
Warranty
24 Months
Transport Package
Air
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20kkkk/Monthly
Reference Price
$ 1.62 - 1.80
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Product Description

General Description
OSG90R1K2xF use advanced GreenMOS TM technology to provide low R DS(ON) , low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.


Features                                                                         Applications
  1. Low R DS(on) & FOM                                                Lighting
  2. Extremely low switching loss                                 Hard switching PWM
  3. Excellent stability and uniformity                            Server power supply
  4. Easy to drive                                                          Charger

Key Performance Parameters
 
    1. Absolute Maximum Ratings at T j =25ºC unless otherwise noted
 
Parameter Symbol Value Unit
Drain source voltage V DS 900 V
Gate source voltage V GS ±30 V
Continuous drain current 1) , T C =25 ºC I D 5 A
Continuous drain current 1) , T C =100 ºC 3.2
Pulsed drain current 2) , T C =25 ºC I D, pulse 15 A
Power dissipation 3) for TO251, TO262 , T C =25 ºC P D 83 W
Power dissipation 3) for TO220F , T C =25 ºC 31
Single pulsed avalanche energy 5) E AS 211 mJ
MOSFET dv/dt ruggedness, V DS =0…480 V dv/dt 50 V/ns
Reverse diode dv/dt, V DS =0…480 V, I SD ≤I D dv/dt 15 V/ns
Operation and storage temperature T stg ,T j -55 to 150 ºC
 
 
  1. &bsp; Thermal Characteristics
 
Parameter Symbol Value Unit
TO251/TO262 TO220F
Thermal resistance, junction- case R θJC 1.5 4.0 ºC/W
Thermal resistance, junction- ambient 4) R θJA 62 62.5 ºC/W
  1. Electrical Characteristics at T j =25 ºC unless otherwise specified
 
Parameter Symbol Min. Typ. Max. Unit Test condition

Drain-source breakdown voltage
BV DSS 		900    
V 		V GS =0 V, I D =250 μA
960 1070   V GS =0 V, I D =250 μA,
T j =150 ºC
Gate threshold voltage V GS(th) 2.0   4.0 V V DS =V GS , I D =250 μA

Drain-source on-state resistance
R DS(ON) 		  1.0 1.2
Ω 		V GS =10 V, I D =2 A
  2.88   V GS =10 V, I D =2 A,
T j =150 ºC

Gate-source leakage current
I GSS 		    100
nA 		V GS =30 V
    - 100 V GS =-30 V
Drain-source leakage current I DSS     10 μA V DS =900 V, V GS =0 V
  1. Dynamic Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance C iss   874.2   pF V GS =0 V, V DS =50 V,
f=100 kHz
Output capacitance C oss   37.5   pF
Reverse transfer capacitance C rss   1.7   pF
Turn-on delay time t d(on)   33.23   ns V GS =10 V, V DS =400 V, R G =33 Ω, I D =5 A
Rise time t r   26.50   ns
Turn-off delay time t d(off)   44.00   ns
Fall time t f   17.63   ns
 
 
  1. Gate Charge Characteristics
Aux Flyback Converter One Switch Opologies Topologies Osg90r1K2FF To220f Aux Flyback High Voltage Power Mosfet
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Q g   12.50   nC
I D =5 A, V DS =400 V, V GS =10 V
Gate-source charge Q gs   3.75   nC
Gate-drain charge Q gd   4.28   nC
Gate plateau voltage V plateau   5.8   V
  1. Body Diode Characteristics
 
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward current I S     5
A
V GS <V th
Pulsed source current I SP     15
Diode forward voltage V SD     1.3 V I S =5 A, V GS =0 V
Reverse recovery time t rr   265.87   ns
V R =400 V, I S =5 A,
di/dt=100 A/μs
Reverse recovery charge Q rr   2.88   μC
Peak reverse recovery current I rrm   19.51   A
  1. Note
 
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a =25 ºC.
  5. V DD =100 V, R G =47 Ω, L=10 mH, starting T j =25 ºC.
   
     
     
     
     

Marking Information
 
Product Name Package Marking
OSG65R038HZF TO247 OSG65R038HZ
Absolute Maximum Ratings at T j =25°C unless otherwise noted
 
Parameter Symbol Value Unit
Drain-source voltage V DS 650 V
Gate-source voltage V GS ±30 V
Continuous drain current 1) , T C =25 °C
I D 		80
A
Continuous drain current 1) , T C =100 °C 50
Pulsed drain current 2) , T C =25 °C I D, pulse 240 A
Continuous diode forward current 1) , T C =25 °C I S 80 A
Diode pulsed current 2) , T C =25 °C I S, pulse 240 A
Power   dissipation 3)   , T C =25   °C P D 500 W
Single pulsed avalanche energy 5) E AS 2900 mJ
MOSFET dv/dt ruggedness, V DS =0…480 V dv/dt 100 V/ns
Reverse diode dv/dt, V DS =0…480 V, I SD ≤I D dv/dt 50 V/ns
Operation and storage temperature T stg , T j -55 to 150 °C

Thermal Characteristics
 
Parameter Symbol Value Unit
Thermal resistance, junction- case R θJC 0.25 °C/W
Thermal resistance, junction- ambient 4) R θJA 62 °C/W

Electrical Characteristics at T j =25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Test condition

Drain-source breakdown voltage
BV DSS 		650    
V 		V GS =0 V, I D =2 mA
700 770   V GS =0 V, I D =2 mA, T j =150 °C
Gate threshold
voltage 		V GS(th) 3.0   4.5 V V DS =V GS , I D =2 mA

Drain- source
on-state resistance
R DS(ON) 		  0.032 0.038
Ω 		V GS =10 V, I D =40 A
  0.083   V GS =10 V, I D =40 A, T j =150 °C
Gate-source leakage current
I GSS 		    100
nA 		V GS =30 V
    - 100 V GS =-30 V
Drain-source leakage current I DSS     10 μA V DS =650 V, V GS =0 V
Gate resistance R G   2.1   Ω ƒ=1 MHz, Open drain

Dynamic Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Input capacitance C iss   9276   pF
V GS =0 V, V DS =50 V,
ƒ=100 kHz
Output capacitance C oss   486   pF
Reverse transfer capacitance C rss   12.8   pF
Effective output capacitance, energy related C o(er)   278   pF
V GS =0 V, V DS =0 V-400 V
Effective output capacitance, time related C o(tr)   1477   pF
Turn-on delay time t d(on)   55.9   ns
V GS =10 V, V DS =400 V, R G =2 Ω, I D =40 A
Rise time t r   121.2   ns
Turn-off delay time t d(off)   114.2   ns
Fall time t f   8.75   ns

Gate Charge Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Total gate charge Q g   175.0   nC

V GS =10 V, V DS =400 V, I D =40 A
Gate-source charge Q gs   40.1   nC
Gate-drain charge Q gd   76.1   nC
Gate plateau voltage V plateau   6.4   V

Body Diode Characteristics
Parameter Symbol Min. Typ. Max. Unit Test condition
Diode forward voltage V SD     1.3 V I S =80 A, V GS =0 V
Reverse recovery time t rr   180   ns
I S =30 A,
di/dt=100 A/μs
Reverse recovery charge Q rr   1.5   uC
Peak reverse recovery current I rrm   15.2   A

Note
  1. Calculated continuous current based on maximum allowable junction temperature.
  2. Repetitive rating; pulse width limited by max. junction temperature.
  3. Pd is based on max. junction temperature, using junction-case thermal resistance.
  4. The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a =25 °C.
  5. V DD =300 V, V GS =10 V, L=40 mH, starting T j =25 °C.
Aux Flyback Converter One Switch Opologies Topologies Osg90r1K2FF To220f Aux Flyback High Voltage Power Mosfet Aux Flyback Converter One Switch Opologies Topologies Osg90r1K2FF To220f Aux Flyback High Voltage Power Mosfet Aux Flyback Converter One Switch Opologies Topologies Osg90r1K2FF To220f Aux Flyback High Voltage Power Mosfet Aux Flyback Converter One Switch Opologies Topologies Osg90r1K2FF To220f Aux Flyback High Voltage Power Mosfet

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